Effect of dopant concentration on thermoelectric and hydrogen sensing properties of silicon-germanium thin film
碩士 === 國立中興大學 === 材料科學與工程學系所 === 98 === Si0.72Ge0.28 thin films of 550 nm were deposited on the quartz glass substrate by RF magnetron sputter. The films were ion implanted with boron at dosages between 5×1012 and 1×1015 cm-2, then crystallized by rapidly thermal annealed at 700 °C for 1 minute. Bor...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/00673720226083632832 |