InGaN Light Emitting Diodes with Patterned Gallium-Oxide Current Blocking Layer Through a Photoelectrochemical Process
碩士 === 國立中興大學 === 材料科學與工程學系所 === 98 === In this thesis，photoelectrochemical (PEC) techniques are utilized to fabricate patterned Gallium oxide(GaOx) structures in mesa region on GaN-based LED. The decrease of light extraction results in the cover effect of Cr/Au pad, so current blocking layer of Gal...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/75707604798828202809 |