| Summary: | 碩士 === 明新科技大學 === 光電科技產業研發碩士專班 === 99 === Abstract
Zinc oxide (ZnO) thin films with a strong c-axis preferred orientation, obvious piezoelectric and piezo-optical effects, have been used in acousto-electric and acousto-optical devices.
In this study, Aluminum-doped zinc oxide films were prepared by radio-frequency reactive sputtering on Corning 1737 glass substrates with ceramic targets (ZnO contained 2wt.% Al2O3 ).
The properties of the AZO thin films have been measurement by X-ray diffraction (XRD), 4-point probe system, UV-vis spectrometer, Atomic force microscope (AFM) and Scanning electron microscope (SEM). As the results of the measurement and analysis, the formation of crystal phase, surface morphological structure, electronic and optical characteristics of AZO resulting films were demonstrated.
Additionally, the films were annealed in H2 (Hydrogen gas) ambient at temperature ranging from 200℃ to 500℃, for a period of 15 min. It is shown that the intensity of the X-ray peaks increase with annealing treatment, which leads to an improvement in the crystallinity of the films. By applying annealing at 400℃ in a H2 (Hydrogen gas) ambient for 15 min, the AZO films show the lowest electrical resistivity of 1.08×10-4 Ω-cm, with about 85.0% optical transmittance in the visible region.
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