Study on Nanometer-scale Strain Silicon Channel on Insulator CMOSFET by Applying Low Frequency Noise
碩士 === 明新科技大學 === 電子工程研究所 === 98 === In this years, strained silicon has been used to enhance CMOSFETs in addition to some novel technologies, such as silicon-on-insulator (SOI), fully silicide polysilicon gate (FUSI). This thesis studied the impact of SOI thicknesses and gate capping layer by diffe...
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| Format: | Others |
| Language: | zh-TW |
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2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/93983895676243129867 |