A Study of 45-nm-node Process n/p Strained Silicon Transistors with Silicon Capping Thicknesses
碩士 === 明新科技大學 === 電子工程研究所 === 98 === The MOSFET technology was evolved from 100-um node to 45-nm node due to the cost consideration and marketing competition. The device performances are also directly improved. In the recent stage, some researchers carried out that the strained silicon technology co...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/67732794571209722827 |