Study on the Adjustable Stress of Plasma Enhanced Chemical Vapor Deposition Film by Ion Implantation

碩士 === 國立高雄應用科技大學 === 光電與通訊研究所 === 98 === The objective of this present work is to use ion implantation to adjust stress of plasma enhanced chemical vapor deposition (PECVD) film. The two-dimension suspended structure was design to observe the deformation of membrane. Furthermore, the two-dimension...

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Bibliographic Details
Main Authors: Ming-Hong Xiao, 蕭名宏
Other Authors: Chung-Nan Chen
Format: Others
Language:zh-TW
Published: 2010
Online Access:http://ndltd.ncl.edu.tw/handle/58771777866216817116