The study of highly reflective Ni/Ag ohmic contact to p-GaN for vertical light emitting diodes
碩士 === 崑山科技大學 === 電子工程研究所 === 98 === We mainly discuss the contact characteristics of p-GaN and metal in this thesis. We hope to get high reflectivity and low specific contact resistance, choose the optimized structure and annealing condition, combine the device with silicon substrate by wafer bondi...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/39678487347218615017 |