| Summary: | 碩士 === 華梵大學 === 電子工程學系碩士班 === 98 === In this thesis, TiO2 used the RF-sputtering technology was adopted to fabricate resistor-type UV detector. It improves sol-gel processing for substrates low coherence, low power responsibility etc. Two parts were discussed in this study. Part one, vertical and lateral structures of TiO2/ITO/glass were studied about photocurrent and dark current. Next, we used PET flexible as the substrates and changed the manufacturing process reducing the courses of process.
In the experiment, the TiO2 film of the vertical and lateral structure was deposited on ITO/glass by using titanium target and being full of oxygen in sputtering chamber, in the meantime the base plate is heated to 100℃. The thickness of TiO2 was fixed at 100 nm, then it was annealed at 100℃ 12 hours. PET flexible substrates use same technology to deposit TiO2 film and use Ag printing as the contact electrodes.
In measurement analysis, current-voltage (I-V) characteristics were measured with Keithley4200; thermal annealing effects were investigated by X-ray diffraction (XRD), auger electron microprobe (AEM), and optical absorption; finally on-off response time was taken to define response frequency. In the I-V measurements lateral structure ITO/TiO2/ITO responsibility was 48.7mA/W; Ag/TiO2/Ag responsibility was 3mA/W and the dark current was very low to 1×10-11 A. The TiO2 UV absorption bandwidth is between 200 nm and 3-dB break down at 308nm.
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