Investigation of AlGaAs/InGaAs Pseudomorphic High Electron Mobility Transistors with Metal-Oxide-Semiconductor Gate Structures
碩士 === 逢甲大學 === 電子工程所 === 98 === In this work, we have an effective method of the ozone water treatment and shrinking gate length by Gamma gate metal. Depositing gate metal across a step undercut between the AlGaAs and the oxide to obtain a reduced gate length of 0.9 μm with an additional 0.3 μm fie...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/83319562426377854249 |