In-Situ Nitridation of Titanium Monoxide (TiO) Thin Films by Sputtering Deposition and High-Pressure Oxidation Behavior

碩士 === 逢甲大學 === 產業研發碩士班 === 98 === In this thesis thin films of titanium monoxide (TiO) and titanium oxynitride (TiOxNy) were deposited on Corning Eagle 2000 glass substrates under various Ar-O2 and Ar-O2-N2 mixtures, respectively, by uni-polar pulsed DC magnetron sputtering. Each individual film wa...

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Bibliographic Details
Main Authors: Chia-ming Sun, 孫嘉銘
Other Authors: Giin-shan Chen
Format: Others
Language:zh-TW
Published: 2010
Online Access:http://ndltd.ncl.edu.tw/handle/36045651256557640592
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Summary:碩士 === 逢甲大學 === 產業研發碩士班 === 98 === In this thesis thin films of titanium monoxide (TiO) and titanium oxynitride (TiOxNy) were deposited on Corning Eagle 2000 glass substrates under various Ar-O2 and Ar-O2-N2 mixtures, respectively, by uni-polar pulsed DC magnetron sputtering. Each individual film was post thermally treated by O2-N2 ambient at one atmospre or elevated pressures of 10 and 20 atm, transforming itself to titanium dioxide or N-doped titanium dioxide thin films. The thickness, resistivity, crystal structure and surface chemical states of the as deposited TiO and TiOxNy thin films before and after post thermal treatment were studied by profilometer, four-point probe measurement, X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS). XPS analysis reveals that the TiOxNy thin films comprised Ti-O, Ti-N-O, Ti-N surface chemical states. Elevating the high-pressure by 10 atm can reduce the phase transformation temperature of titanium monoxide films by ~50℃. The photoinduced surface wettability of the vaious TiO2 based thin films were also examined. Keywords: Thin film; Titanium monoxide; Titanium oxy- nitride; Titanium dioxide; High pressure crystallization