Characteristics of Gallium and Aluminum Co-doped ZnO Transparent Thin Films Deposited on PET Substrates by RF Magnetron Sputtering

碩士 === 逢甲大學 === 材料與製造工程所 === 98 === The author reported that surface treatment for PET substrates by using corona discharge and Ga and Al co-doped ZnO (GAZO) thin films deposited on as-treatment PET substrates by RF magnetron sputtering. Characterization of PET substrates after corona discharge was...

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Bibliographic Details
Main Authors: Kun-Che Pai, 白昆哲
Other Authors: 蔡健益
Format: Others
Language:zh-TW
Published: 2010
Online Access:http://ndltd.ncl.edu.tw/handle/83473761528208966090
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Summary:碩士 === 逢甲大學 === 材料與製造工程所 === 98 === The author reported that surface treatment for PET substrates by using corona discharge and Ga and Al co-doped ZnO (GAZO) thin films deposited on as-treatment PET substrates by RF magnetron sputtering. Characterization of PET substrates after corona discharge was carrier out by contact angle and laser scanning microscopy. Experimental results showed that surfaces of PET substrates were modified corona discharge, at a power of corona discharge of 3 kW and at a transmission speed of 2 m/min, would improve surface energy above 56 mN/m. Moreover, transparent and flexible GAZO thin films were prepared by RF magnetron sputtering. Effect of substrate temperatures on crystallinity levels, microstructures, optical and electrical properties of these GAZO thin films were investigated. Experimental results also showed that deposition rates, crystallinity levels and electrical properties of GAZO thin films improved with substrate temperatures increasing. Among the GAZO thin films in this study, the films deposited on substrate temperature at 135 ℃which exhibited the best properties, namely highest crystallinity level, a resistivity of 0.372 Ω-cm, a carrier concentration of 3.03×1018 cm3 and a carrier mobility of 5.53 cm2/ Vs.