The Study of Ti-doped Tb2O3 and Y2O3 High-K Dielectrics on Polycrystalline Silicon by RF Sputtering
碩士 === 長庚大學 === 電子工程學系 === 98 === In this thesis, we added Ti to the Tb2O3、Y2O3、Gd2O3 film to form Ti-doped high-k dielectrics in place of traditional SiO2 insulator for applying in thin film transistor process. These high-k materials were deposited on polysilicon by RF sputtering and combined with...
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| Format: | Others |
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2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/22270518067539909835 |