Enhancement of extraction efficiency for GaN-based light emitting diodes on patterned sapphire substrates and analysis with optical simulation cell
碩士 === 長庚大學 === 光電工程研究所 === 98 === 英文摘要 Recently, wide-bandgap semiconductors have been attracting great interest for applications to optoelectronic devices such as InGaN/GaN-based light-emitting diodes (LEDs). However, for future illumination applications, it is very important to further enhance...
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| Format: | Others |
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2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/20059858963475017381 |