Design and Simulation of Schottky Barrier Flash Memory
碩士 === 元智大學 === 電機工程學系 === 97 === The standard floating gate Flash cells is the mainstream nonvolatile semiconductor memory. The challenges to future scaling are imposed by the non-scalable tunneling oxide and high voltage to provide sufficient drain-side hot electron injections. This study uses two...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/97333038717092396795 |