Magnetoresistance measurement of magnetic tunnel junction wafers by patterned current-in-plane tunneling method
碩士 === 國立雲林科技大學 === 材料科技研究所 === 97 === The development of magnetic tunneling junctions (MTJs) mainly concentrates on raising their magnetoresistance ratios (MR) while reducing the values of the resistance-area product (RA). To measure MR and RA values, the blanket wafers are usually needed to be pa...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/49354867003644718355 |