Effective Edge Width for 65 nm pMOSFETs and Their Variations under HC Stress at Elevated Temperature
碩士 === 國立臺北科技大學 === 機電整合研究所 === 97 === On the basis of the semiconductor of silicon, the mean free path of holes is shorter than electrons, and hole’s mobility is slower than electrons about one third of the electrons at the room temperature. Therefore, the hot-carrier inducing characteristic degrad...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/4a9c6u |