Study of TixTay-Doped HfLaON on Electrical and Reliability Characteristics of Advanced Metal-Oxide-Semiconductor Capacitors

碩士 === 國立虎尾科技大學 === 機械與機電工程研究所 === 97 === In this thesis, the effects of the nitrogen concentration profiles in the HfLaON gate dielectric on the electrical and reliability properties of metal-oxide-semiconductor (MOS) capacitors were investigated. The nitrogen concentration in HfLaON gate dielectr...

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Bibliographic Details
Main Authors: Hung-Yang Tsai, 蔡弘揚
Other Authors: 鄭錦隆
Format: Others
Language:zh-TW
Published: 2009
Online Access:http://ndltd.ncl.edu.tw/handle/w33m69