Effect of the AlN-ZnO cosputtered films annealed under various atmosphere
碩士 === 國立虎尾科技大學 === 光電與材料科技研究所 === 97 === Al-N codoped zinc oxide films were prepared using a radio-frequency magnetron cosputtering system using AlN and ZnO targets. The samples were annealed to achieve dopant atom activation in different ambient environments. Type and formation mechanism of free c...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/4953un |