| Summary: | 碩士 === 國立臺灣科技大學 === 光電工程研究所 === 97 === In this research, the silica nanowires (SiOx NWs) were synthesized on silicon substrate via a thin gold catalytic reaction by the thermal chemical vapor deposition system. The XeF excimer laser with different energy was adapted as the pretreatment and post-treatment technique for silica nanowires. The FE-SEM and FTIR and XPS were used for silica nanowires characteristic. Furthermore, It was observed that the I-V characteristic of patterned silica nanowires was improved.
To investigate the potential application for the bundles of silicon nanowires in solar cell anti-reflection, the anti-reflection properties for the bundles of silicon nanowires were studied with different length. The reflectance is lowest (<5%) in the visible region as the nanowires length increased. Regardless, the reflectance was increased after the CF4 and H2 plasma post-treatment.
The photoluminescence characteristic for the bundles of silicon nanowires by EMD process is inferior to those by the chemical vapor disposition (CVD) technique. The photoluminescence intensity for the bundles of silicon nanowires is low. The photoluminescence intensity was enhanced as the nanowires length increased. It was found that the photoluminescence intensity is strongest after the CF4 plasma post-treatment for 400 sec. However, there was no obvious variation for the H2 plasma post-treatment.
It was observed that turn-on field was approximately 14.6 V/μm for the bundles of silicon nanowires in the field emission measurement. The high turn-on field could be a result of screen effect due to the high density of nanowires getting to close to each other. After CF4 plasma post-treatment, it was found that the lowest turn-on field and highest β factor were 14.2 V/μm、645, respectively.
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