Bi-directional Diode
碩士 === 國立臺灣大學 === 電機工程學研究所 === 97 === Until today, gate length of MOSFET have scaled down to nano-scale. As semiconductor process keep regenerating, ITRS predict that the channel length will smaller than sixteen nano. Process technologic followed technic of nowadays will not keep scaling down. In or...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2009
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/32564257253440695930 |