Investigation of InGaN/GaN Nanostructures Using the X-ray Diffraction Techniques

博士 === 國立臺灣大學 === 電機工程學研究所 === 97 === In this dissertation, we utilize X-ray diffraction technique to characterize InGaN/GaN nanostructures. First, we compare the X-ray diffraction (XRD) results of two InGaN/GaN quantum-well (QW) structures to observe the effects of prestrained growth by depositing...

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Bibliographic Details
Main Authors: Wen-Yu Shiao, 蕭文裕
Other Authors: 楊志忠
Format: Others
Language:en_US
Published: 2009
Online Access:http://ndltd.ncl.edu.tw/handle/14876168876168539602