Transport Mechanism of Si Nanowires Contacted to Pt Deposited by Focus-Ion-Beam
碩士 === 國立臺灣大學 === 光電工程學研究所 === 97 === In this thesis, The galvanic wet etching was adopted to fabricate single-crystalline n-Si nanowires (NWs) at room temperature in HF/AgNO3 solution. The focus-ion-beam-deposited Pt (FIB-Pt) was employed to connect photolithographically prepared Cr/Au (5/60 nm) pa...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/80368855598377173945 |