A Study of Operation Performance Promotion for Flash Memory
博士 === 國立清華大學 === 工程與系統科學系 === 97 === The programming and erasing operations of flash memory device can be performed by injecting electron through the tunneling dielectric layer while a high voltage is applied. These operations possibly cause damage to the SiO2/Si interface or SiO2 itself if manufac...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/29657400064356766797 |