A Single-Supply Low-Voltage 8T SRAM Cell
碩士 === 國立清華大學 === 電機工程學系 === 97 === Write failure and read disturb limited the minimum operation voltage (VDDmin) of SRAM. We proposed a single supply 8-transistor SRAM cell with improved write margin (WM) and read-static noise margin (RSNM) to achieve low operation voltage.The proposed 8T SRAM ce...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/36766446677988757360 |