Analysis of Double Hump Substrate Current in N-type Lateral Diffuses Metal Oxide Semiconductor Field Effect Transistor (LDMOSFET)
碩士 === 國立清華大學 === 電子工程研究所 === 97 === In recent years, device has become smaller gradually. Due to the reason the problem of hot-carrier effect becomes more and more important. So in this thesis we study the substrate current and reliability of LDMOSFET. In this thesis we use the BCD 0.6um process an...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/28190039069816104953 |