Study on Effects of Process Paramenters to Crystallinity and Doping Characteristics of Silicon Thin Film Deposited by High Density Plasma Chemical Vapor Deposition (HDPCVD)
碩士 === 國立清華大學 === 電子工程研究所 === 97 === In this research work, we use high density plasma chemical vapor deposition system to fabricate uc-Si/poly-Si films, and study the crystallinity and doping characteristics affected by adjustable process parameters, hydrogen dilution ratio, RF power, process press...
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| Format: | Others |
| Language: | en_US |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/89653949963544088676 |