Study of Tunnel Oxide and Inter-poly Dielectric with WSix Gate for Application in Nano-scale NAND Flash Memory Technology
博士 === 國立清華大學 === 電子工程研究所 === 97 === The objective of this dissertation is to investigate the feasibility of continued scaling for nanoscale floating gate NAND flash memory by means of integration optimization and novel process application. The analysis of anomalous tunnel oxide re-growth has been c...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/11079680279743839275 |