Low Voltage and High Speed Floating Gate Flash Memory Cells
碩士 === 國立清華大學 === 電子工程研究所 === 97 === The objectives of this thesis is to explore in depth the feasibility of low-voltage, high-speed Floating-Gate (FG) Flash memory cell through the proper minimizations of tunneling oxide and inter-poly dielectric (IPD) layers. Here, high-k materials and metal contr...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/48881826598698326143 |