Enhanced photon-induced free carrier density in silicon-on-insulator via applying external electric field on the surface

• Main Authors: Hsieh,Ming-Kai, 謝名凱
• Other Authors: Lee,Ming-Chang
• Format: Others
• Language: zh-TW
• Published: 2008
• Online Access: http://ndltd.ncl.edu.tw/handle/88650858786787055529

碩士 === 國立清華大學 === 光電工程研究所 === 97 === In this paper, we studied the enhancement of photon-induced free-carrier density in silicon-on-insulator (SOI) by applying electric field. Under such a bias, electronic band bends near the surface, resulting in the interface condition either in accumulation or inversion that depends on the polarity of bias voltage. Both conditions will effectively suppress the surface recombination. In addition, the photon-induced carrier density is also dependent on the thickness of SOI substrate. The enhancement due to two-side bias (bottom and top) is better than single-side bias, simply equivalent to two effects added together.