Enhanced photon-induced free carrier density in silicon-on-insulator via applying external electric field on the surface
碩士 === 國立清華大學 === 光電工程研究所 === 97 === In this paper, we studied the enhancement of photon-induced free-carrier density in silicon-on-insulator (SOI) by applying electric field. Under such a bias, electronic band bends near the surface, resulting in the interface condition either in accumulation or in...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/88650858786787055529 |