NBTI characteristics of p-MOSFETs under external mechanical stress

• Main Authors: Po-wen Hsiao, 蕭博文
• Other Authors: Ting-Chang Chang
• Format: Others
• Language: zh-TW
• Published: 2009
• Online Access: http://ndltd.ncl.edu.tw/handle/3n9r6t

碩士 === 國立中山大學 === 物理學系研究所 === 97 === In this thesis, in order to eliminate process issue, an external mechanical uniaxial tensile and compressive stress applied on p-type metal-oxide-semiconductor field effect transistors (p-MOSFETs) is used for the study of negative bias temperature instability (NBTI) characteristics. Drain current and hole mobility decreases under uniaxial tensile strain, and the NBTI characteristics also become more serious simultaneously. And drain current and hole mobility increases under uniaxial compressive strain, and the NBTI characteristics also become less serious simultaneously. By analyzing split capacitance-voltage (C-V) characteristics, inversion charge increases and decreases due to strain induced change of band splitting and effective mass under uniaxial tensile strain and uniaxial compressive strain, respectively. According to Reaction-Diffusion model, interface trap generation rate is proportional to the number of holes in inversion layer. Therefore, the worse NBTI degradation resulted from increased inversion charge induced by uniaxial tensile strain. And the better NBTI degradation resulted from decreased inversion charge induced by uniaxial compressive strain.