NBTI characteristics of p-MOSFETs under external mechanical stress
碩士 === 國立中山大學 === 物理學系研究所 === 97 === In this thesis, in order to eliminate process issue, an external mechanical uniaxial tensile and compressive stress applied on p-type metal-oxide-semiconductor field effect transistors (p-MOSFETs) is used for the study of negative bias temperature instability (NB...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/3n9r6t |