Formation of Co-Si-N nanocrystal for nonvolatile memory application
碩士 === 國立中山大學 === 物理學系研究所 === 97 === Current requirement of nonvolatile memory (NVM) are high density cell, low-power wastage, high speed operation, and good reliability for the scaling down device. In a conventional nonvolatile memory, once the tunnel oxide develops a leaky path under repeated writ...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/863w3p |