Nonvolatile Memory based on NiSi2/SiNX compound nanocrystals
碩士 === 國立中山大學 === 光電工程研究所 === 97 === Current requirements of nonvolatile memory (NVM) are the high density cells, low-power consumption, high-speed operation and good reliability for next-generation NVM application. However, all of the charges stored in the floating gate will leak into the substrate...
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| Format: | Others |
| Language: | en_US |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/7wnh76 |