| Summary: | 碩士 === 國立中山大學 === 光電工程研究所 === 97 === Transparent Ino (Indium oxide) thin-film transistors fabricated by reactive ratiofrequency (rf) magnetron sputtering at room temperature
were demonstrated. The resistivity and X-ray diffraction pattern of the films prepared at sputtering power of 40W、gas pressure of 1.5mTorr , and different oxygen partial pressures were investigated . At a 50% oxygen partial pressure , the resistivity of the films is 4.7×104 Ω-cm . Indium tin oxide (ITO) and silicon nitride (SiNx) thin films are used as the electrode and gate insulator . The resistivity of ITO electrodes is 7×10-4 Ω-cm .On the other hand , the maximum leakage current of less than 1×10-10A/cm2 was obtained for the SiNx layer at an electric field of 1 MV/cm .
Sputtering power is changed from 40W to 60W at the situation of gas pressure of 1.5mTorr and oxygen partial pressures of 50% . When sputtering power is 50W , the measured saturation mobility , threshold voltage , on/off ratio and subthreshold swing are 3 cm2v-1s-1 , 3V , 1.7×106 and 1.34 V/decade , respectively for a 20μm channel length Ino TFT .
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