Process optimization of Indium oxide for transparent thin-film transistors
碩士 === 國立中山大學 === 光電工程研究所 === 97 === Transparent Ino (Indium oxide) thin-film transistors fabricated by reactive ratiofrequency (rf) magnetron sputtering at room temperature were demonstrated. The resistivity and X-ray diffraction pattern of the films prepared at sputtering power of 40W、gas pressure...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/6jwyjd |