Surface Analysis of AlGaAs/GaAs and InGaAs/InAlAs Compounds Semiconductor Device
碩士 === 國立東華大學 === 材料科學與工程學系 === 97 === In this thesis, GaAs doped-channel heterostructure FETs (DCFETs) and metamorphic high electron mobility transistor (MHEMT) grown by metal-organic chemical vapor deposition (MOCVD) are proposed. Selective wet etching and etch stop layer are adopted to obtain goo...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/62915802614747895189 |