Optical characterization of InAlAs/InGaAs metamorphic high-electron mobility transistors with tensile and compressive strain
碩士 === 國立東華大學 === 光電工程研究所 === 97 === Photoluminescence (PL) and photoreflectance (PR) are used to study optical properties of semiconductors. In this work, we characterize InAlAs/InGaAs metamorphic high-electron mobility transistors (MHEMT) with tensile and compressive strain by using PL and PR tech...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/46339929221093399836 |