| Summary: | 碩士 === 國立嘉義大學 === 光電暨固態電子研究所 === 97 === In this study, Pulsed laser deposition (PLD) technique is used to deposited Gallium-doped ZnO (GZO) thin films on glass substrates with various substrate temperatures and dopant concentration. The composition, structural, electrical and optical properties were performed by EDS, XPS, FESEM, XRD, AFM, four-point probe, Hall-Effect, CAFM and UV-VIS spectrum measurements. The resistivity of GZO films shows very sensitive dependence on dopant concentration and substrate temperature. The Hall measurement shows that the higher conductivity is due to the increase in the carrier concentration and mobility of carriers with increasing substrate temperature at 3% Ga dopant. The resistivity decreased rapidly with the increasing the substrate temperature to a minimum of 9.355×10-5Ω-cm at 350℃. To understand the effect of microstructure on the electrical properties of films, the resistivity and mobility of the GZO films grown under different deposition conditions were measured in the temperature range of 80~270K. The electrical transport properties of GZO thin films with different dopant were investigated by temperature-dependent mobility voltage (�搳VT) measurements. The potential barrier height at the grain boundary can be estimated from the extrapolated slope of . The potential barrier height of 3% Ga dopant is lower than the 1.0% and 5.0 % Ga dopant. It is consistent with the Hall measurement results.
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