2.45-GHz Low Noise Amplifier CMOS IC Design
碩士 === 國立彰化師範大學 === 積體電路設計研究所 === 97 === This thesis presents the design of low-noise amplifiers fabricated in TSMC 0.18-μm 1P6M CMOS process for Bluetooth and 2.45-GHz band applications. The first chip is the low-power low-noise amplifier applied for Bluetooth system. Low power consumption and reas...
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| Format: | Others |
| Language: | en_US |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/36225549848878517508 |