Development of hot-melt adhesive pad and study of silicon wafer grinding effect

• Main Authors: Hong-Zen Ke, 柯閎仁
• Other Authors: Fuang-Yuan Huang
• Format: Others
• Language: zh-TW
• Published: 2009
• Online Access: http://ndltd.ncl.edu.tw/handle/08705599403038793060

碩士 === 國立中央大學 === 機械工程研究所 === 97 === During the silicon wafer manufacture procedure , after slicing and edge contouring , silicon wafer surface results in saw mark and damaged layer and affects the following manufacture procedure . This research tries to combine new hot-melt adhesive pad with free SiC slurry to grind silicon wafer which makes silicon wafer surface quality smooth and reduces subsurface damaged layer. In hot-melt adhesive pad aspect , the pad is made from thermosetting plastic materials(Ethylene-Vinyl Acetate) . Manufacture procedure of the hot-melt adhesive pad is to use hot-melt adhesive spray machine to heat hot-melt adhesive materials which become molten state and then use spray gun of 0.5 mm aperture to form hot-melt adhesive fiber by the high-pressured method and finally spread SiC particles(#8000) on hot-melt adhesive fiber ; the advantage of hot-melt adhesive pad , moreover , the cost of hot-melt adhesive material is cheap and it’s elastic characteristic can cushion action force between pad and silicon sample ; finally , we can select the best pad to grind silicon sample by analyzing the hot-melt adhesive pad characteristic , and we find that hot-melt adhesive pad exist a suitable hot-melt adhesive layer to let pad sustain complete shape.The experiment parameters include feed rate , load , grinding speed , SiC concentration , grinding cycle , then use precision instrument (SEM , AFM , TEM , Raman) to examine silicon sample surface and analyze subsurface microscopic structure after grinding silicon sample . In silicon wafer surface quality and subsurface damaged layer aspect , according to the experimental result , when feed rate 0.5 mm/sec , load 50 g , grinding speed 8000 rpm , SiC concentration 15% , grinding cycle 3 times , surface roughness can be improved from Ra : 41.91 nm to Ra : 2.45 nm , and then subsurface damaged layer can be improved to about 150 nm , finally the silicon sample surface exists amorphous layer by using raman spectral analysis and computes it’s thickness about 10 nm .