Electrical Analysis and Carrier Transport Characterization of Silicon Nanowire Transistors
碩士 === 國立中央大學 === 電機工程研究所 === 97 === In the past decades, the device dimensions have being aggressively scaled into the nanometer regime, in which strong quantum mechanics effects emerge to affect carrier transport. Consequently, the classical drift-diffusion models are not enough to explain well th...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/33349640965836265205 |