Development of InAs/AlSb Metal-Oxide-Semiconductor HEMT
碩士 === 國立中央大學 === 電機工程研究所 === 97 === InAs/AlSb high electron mobility transistor has great promise in high speed and low power applications. However, two drawbacks observed in the devices are closely associated with type II band line-up and small bandgap InAs channel. One is band-to-band hole tunnel...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/11053001041001288412 |