nGaAsSb base DHBT with low emitter size effect and low resistance ohmic contacts
碩士 === 國立中央大學 === 電機工程研究所 === 97 === A novel heterojunction bipolar transistor (HBT) with an InGaAsSb base was proposed and demonstrated by this group in 2006.This novel transistor not only has low turn-on voltage and low offset voltage but also has excellent radio-frequency performance. In order to...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/86709040056630082059 |