Highly smooth low-resistance n-type ohmic contacts to AlGaN/GaN high electron mobility transistors

Highly smooth low-resistance n-type ohmic contacts to AlGaN/GaN high electron mobility transistors

碩士 === 國立中央大學 === 電機工程研究所 === 97 === Wide bandgap AlGaN/GaN heterostructures have been widely used in high electron mobility transistors (HEMTs) for high temperature, high frequency, and high power applications. For high power devices, ohmic contacts with low contact resistance, smooth surface and c...

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Bibliographic Details
Main Authors:	Yung-Ling Lan, 藍永凌
Other Authors:	Jen-Inn Chyi
Format:	Others
Language:	zh-TW
Published:	2009
Online Access:	http://ndltd.ncl.edu.tw/handle/42265944871409881640

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