Highly smooth low-resistance n-type ohmic contacts to AlGaN/GaN high electron mobility transistors
碩士 === 國立中央大學 === 電機工程研究所 === 97 === Wide bandgap AlGaN/GaN heterostructures have been widely used in high electron mobility transistors (HEMTs) for high temperature, high frequency, and high power applications. For high power devices, ohmic contacts with low contact resistance, smooth surface and c...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/42265944871409881640 |