Curvature Effect and Back Gate Bias Effect on Semiconductor Device Breakdown Simulation
碩士 === 國立中央大學 === 電機工程研究所 === 97 === In this paper, we design a 2-D device simulator which includes the impact-ionization model to simulate the avalanche breakdown. First, we use load line technique to solve the numerical problem due to the rapid breakdown current. Second, for studying the curvature...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/77aj3u |