Fabrication and analysis of a novel GaN Schottky Diodes
碩士 === 國立中央大學 === 物理研究所 === 97 === In this thesis a new AlGaN/GaN high electron mobility transistor basedrectifier, i.e. P-field effect Schottky barrier diode (P-FESBD), is proposed andfabricated. It consists of a p-n diode and a Schottky diode connected in parallel.With the additional p-type GaN ga...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2009
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/93359234175393166653 |