The XPS Analysis of GaN by N2+ Ion Beam Nitridation GaAs

• Main Authors: Ron-Kai Hsu, 許榮凱
• Other Authors: Biing-Hwa Yan
• Format: Others
• Language: zh-TW
• Published: 2008
• Online Access: http://ndltd.ncl.edu.tw/handle/mbjnjc

碩士 === 國立中央大學 === 材料科學與工程研究所 === 97 === Abstract 　　Because of its good physical properties, GaN becomes an important m- aterial that is widely used on various dimensions. Nowadays, many techniq- ues are taken to produce GaN, such as MOCVD, MBE, etc. However, due to there are large lattice mismatch between substrates and GaN layer, by using nitridation of GaAs to form a buffer layer before producing GaN on the subs- trate is an alternative in recent years. 　　In the experiment, ion beam nitridation of GaAs using two different vol- tages of N2+ ion beam fixed in 10 keV and 5 keV , the ion beam current dens- ity from 2 to 4 μA and fixed three different doses are used to nitridation of GaAs. An X photoelectron spectroscopy (XPS) is used to do the analysis here. Argon ion beam clean carbon and oxygen pollutants form a surface of gallium -rich on gallium arsenide. According to the analysis, it is found that the higher the voltage of gallium ion beam is, the thicker the film of GaN is, and the gre- ater the dose is, the film of GaN is also thicker. 　　Compared with other references, the thickness of GaN films in this expe- riment has little difference with their results. Therefore, the experiment para- meter of the thickness of GaN film in this experiment is reliable.