The XPS Analysis of GaN by N2+ Ion Beam Nitridation GaAs
碩士 === 國立中央大學 === 材料科學與工程研究所 === 97 === Abstract Because of its good physical properties, GaN becomes an important m- aterial that is widely used on various dimensions. Nowadays, many techniq- ues are taken to produce GaN, such as MOCVD, MBE, etc. However, due to there are large lattice mismatch b...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
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2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/mbjnjc |